ITCH22161B2E

Innogration (Suzhou) Co., Ltd. Document Number: ITCH22161B2 Preliminary Datasheet V1.0 2110MHz-2170MHz, 160W, 28V High Power RF LDMOS FETs Description The ITCH22161B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH22161B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% . Frequency Gp @ POUT=48dBm P-1dB P-3dB D@P-3 (MHz) (dB) (dBm) (dBm) (%) 2110  17.5 52.5 53.3 56 2140 17.5 52.2 53.1 56 2170 17.5 51.8 52.9 56 ITCH22161B2E Typical Single-Carrier W-CDMA Performance (On Test Fixture with device soldered): VDD=28Volts, IDQ = 800 mA, POUT= 46dBm Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 10.5 dB @ 0.01...