Document
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH20210B2 Preliminary Datasheet V1.0
1800MHz-2000MHz, 210W, 28V High Power RF LDMOS FETs
Description
The ITCH20210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH20210B2
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% .
Frequency
Gp
P-1dB
P-3dB
D@P-3
(MHz)
(dB)
(dBm)
(dBm)
(%)
1805
19.2
53.2
54.1
58.5
1842.5
19.0
52.9
53.8
57.9
1880
19.0
52.6
53.6
58.1
ITCH20210B2E
Typical Single-Carrier W-CDMA Performance (On Test Fixture with device soldered):
VDD=28Volts, IDQ = 780 mA, POUT= 47.5dBm Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 10.5 dB @ 0.01.