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ITCH20210B2 Dataheets PDF



Part Number ITCH20210B2
Manufacturers Innogration
Logo Innogration
Description High Power RF LDMOS FET
Datasheet ITCH20210B2 DatasheetITCH20210B2 Datasheet (PDF)

Innogration (Suzhou) Co., Ltd. Document Number: ITCH20210B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 210W, 28V High Power RF LDMOS FETs Description The ITCH20210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH20210B2 Typical Performance (On Innogration fixture with devi.

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Document
Innogration (Suzhou) Co., Ltd. Document Number: ITCH20210B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 210W, 28V High Power RF LDMOS FETs Description The ITCH20210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH20210B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% . Frequency Gp P-1dB P-3dB D@P-3 (MHz) (dB) (dBm) (dBm) (%) 1805  19.2 53.2 54.1 58.5 1842.5 19.0 52.9 53.8 57.9 1880 19.0 52.6 53.6 58.1 ITCH20210B2E Typical Single-Carrier W-CDMA Performance (On Test Fixture with device soldered): VDD=28Volts, IDQ = 780 mA, POUT= 47.5dBm Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 10.5 dB @ 0.01.


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