ITCH20120B2E

Innogration (Suzhou) Co., Ltd. Document Number: ITCH20120B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 120W, 28V High Power RF LDMOS FETs Description The ITCH20120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH20120B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% . Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 1805 MHz 19.3 50.7 55.6 51.3 56.9 1842.5 MHz 19.3 50.7 54.6 51.5 56.4 1880 MHz 19.8 50.7 53.3 51.4 55.3 ITCH20120B2E Features  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Internally Matched for Ease of Use  Excellent thermal stability, low HCI drift  Large Positiv...