ITCH18180B4E

Innogration (Suzhou) Co., Ltd. Document Number: ITCH18180B4 Preliminary Datasheet V1.0 1785MHz-1880MHz, 180W, 28V High Power RF LDMOS FETs Description The ITCH18180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1785 to 1880 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH18180B4 Typical Performance of Doherty Demo (On Innogration fixture with device soldered): VDD =28 Volts, IDQMAIN =450 mA, VGPEAK=0.8V, Pulse CW, Pulse Width=20 us, Duty cycle=10% . Freq P-1dB P-3dB D@P-3 Pavg=45dBm WCDMA Signal(1) (MHz) (dBm) (dBm) (%) Gp (dB) D (%) ACPR5M (dBc) 1785 51.0 52.6 58.7 14.6 44.2 -27.0 1795 51.3 52.7 59.8 14.7 44.2 -27.4 1805 51.1 52.6 59.8 14.8 44.4 -27.4 ITCH18180B4E Typical Performance of Doherty Demo (On Innogration fixture with device soldered): VDD =28 Volts, IDQMAIN =600 ...