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ITCH16230B2

Innogration

High Power RF LDMOS FET


Description
Innogration (Suzhou) Co., Ltd. Document Number: ITCH16230B2 Preliminary Datasheet V1.1 1300MHz-1700MHz, 230W, 28V High Power RF LDMOS FETs Description The ITCH16230B2 is a 230-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz. It Can be used in Class AB/...



Innogration

ITCH16230B2

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