Document
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH16180B4 Product Datasheet V2.0
1300MHz-1600MHz, 180W, 28V High Power RF LDMOS FETs
Description
The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external match network.
ITCH16180B4
Typical Class AB Performance of Single Section (On Test Fixture with device soldered):
VDD = 28 Volts, IDQ = 700 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% .
Frequency Gp (dB)
P-1dB (dBm)
D@P-1 (%)
P-3dB (dBm)
D@P-3 (%)
1447 MHz
19.9
49.1
54.8
50.1
57.9
1457 MHz
20.0
48.8
54.5
49.8
57.6
1467 MHz
20.0
48.3
53.5
49.4
56.7
ITCH16180B4E
Typical Performance of Doherty Circuit(On Test Fixture with device soldered):
VDD = 28 Volts, IDQMAIN = 700 mA, VGPEAK=1.3V, Pulse CW, .