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ITCH16180B4E Dataheets PDF



Part Number ITCH16180B4E
Manufacturers Innogration
Logo Innogration
Description High Power RF LDMOS FET
Datasheet ITCH16180B4E DatasheetITCH16180B4E Datasheet (PDF)

Innogration (Suzhou) Co., Ltd. Document Number: ITCH16180B4 Product Datasheet V2.0 1300MHz-1600MHz, 180W, 28V High Power RF LDMOS FETs Description The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external match network. ITCH16180B4 Typical Class AB Perfo.

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Document
Innogration (Suzhou) Co., Ltd. Document Number: ITCH16180B4 Product Datasheet V2.0 1300MHz-1600MHz, 180W, 28V High Power RF LDMOS FETs Description The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external match network. ITCH16180B4 Typical Class AB Performance of Single Section (On Test Fixture with device soldered): VDD = 28 Volts, IDQ = 700 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% . Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 1447 MHz 19.9 49.1 54.8 50.1 57.9 1457 MHz 20.0 48.8 54.5 49.8 57.6 1467 MHz 20.0 48.3 53.5 49.4 56.7 ITCH16180B4E Typical Performance of Doherty Circuit(On Test Fixture with device soldered): VDD = 28 Volts, IDQMAIN = 700 mA, VGPEAK=1.3V, Pulse CW, .


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