High Power RF LDMOS FET
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH16045A Preliminary Datasheet V2.0
1300-1700MHz, 45W, 28V High Powe...
Description
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH16045A Preliminary Datasheet V2.0
1300-1700MHz, 45W, 28V High Power RF LDMOS FETs
Description
The ITCH16045A is a 45-watt, input-matched LDMOS FETs, designed for Beidou Global Positioning System and communication/ISM applications with frequencies from 1300 MHz to 1700 MHz. It can be used in Class AB/B and Class C for all typical modulation formats.
ITCH16045A2
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 50 mA, CW.
Frequency Gp (dB)
P-1dB (W )
D@P-1 (%)
1615 MHz
20
43 64.5
ITCH16045A2E
Features
High Efficiency and Linear Gain Operations Integrated ESD Protection Internally Matched for Ease of Use Excellent thermal stability, low HCI drift
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
Pb-free, RoHS-compliant
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
65 Vdc
Gate...
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