ITBH09150B2E

Innogration (Suzhou) Co., Ltd. Document Number: ITBH09150B Product Datasheet V2.0 700MHz-1000MHz, 150W, 28V High Power RF LDMOS FETs Description The ITBH09150B is a 150-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITBH09150B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 1000 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10% . Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 960 MHz 20.5 51.9 62.5 53 67.9 ITBH09150B2E Features  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Internally Matched for Ease of Use  Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Rang...