RF Power LDMOS FET
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH36015E2 Preliminary Datasheet V1.1
700MHz-3600MHz, 20W, 28V RF Pow...
Description
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH36015E2 Preliminary Datasheet V1.1
700MHz-3600MHz, 20W, 28V RF Power LDMOS FETs
Description
The ITCH36015E2 is a 20-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 700MHz to 3600 MHz
ITCH36015E2
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 120 mA,Pulse Width =20us, Duty Cycle =10%.
Frequency (MHz)
GMAX (dB)
P_1dB (dBm)
P_3dB (dBm)
ηD (%)
Pavg=33dBm WCDMA Signal(1)
Gp η D ACPR_5M
(dB) (%)
(dBc)
869
22.9
43.7
44.2
64.1
22.6 21.6
-37.1
881.5
22.9
43.4
44.0
65.7
22.5 22.2
-38.8
894
22.4
43.2
43.7
67.2
22.2 22.9
-39.4
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 100 mA,Pulse Width =20us, Duty Cycle =10%.
Frequency (MHz)
GMAX (dB)
P_1dB (dBm)
P_3dB (dBm)
ηD (%)
Pavg=33dBm WCDMA Signal(1)
Gp η D ACPR_5M
(dB) (%)
(dBc)
2500
15.4
...
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