ITSN20015P2

Innogration (Suzhou) Co., Ltd. 15W, 12V RF Power LDMOS FETs Description The ITSN20015P2 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications, with frequencies up to 2 GHz. Document Number: ITSN20015P2 Product Datasheet V2.0 ITSN20015P2 Typical Performance (On Innogration fixture with device soldered): VDD = 12 Volts, IDQ = 300 mA，CW. Frequency P_1dB ηD P_3dB ηD Gp (dB) (MHz) (W) (%) (W) (%) 870 16.4 18 56 22 60 Typical Performance (On Innogration fixture with device soldered): VDD = 12 Volts, IDQ = 350 mA，CW. Frequency Gp (dB) P_1dB ηD P_3dB ηD (MHz) (W) (%) (W) (%) 2000 10.2 14.9 48.7 18.8 52.8 Figure 1. Pin Connection Features  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Designed for broadband operation  Excellent ruggedness  Large Positive and Negative Gate/Source Voltage Range for Improved C...