Document
Innogration (Suzhou) Co., Ltd.
350W, 50V RF Power N-channel MOSFETs
Description
The VTSV02350 is a 350-watt, gold metallized N-channel MOSFETs, designed for HF/VHF/UHF commercial and industrial applications at frequencies up to 200 MHz.
Typical Performance (In Demo Fixture): VDD = 50 Volts, IDQ = 500 mA, CW.
Frequency Gp (dB)
POUT (W)
D (%)
175 MHz
17
350
60
Document Number: VTSV02350 Production Datasheet V1.1
VTSV02350
Features
Gold metallization Common source configuration, push pull Excellent thermal stability, low HCI drift Low RDS(on) Pb-free, RoHS-compliant
Table 1. Maximum Ratings Rating
Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ ) Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Range Case Operating Temperature Operating Junction Temperature
Symbol V(BR)DSS VDGR
VGS ID PDISS Tstg TC TJ
Drain 12
Gate Source
34
5
Figure 1. Pin Connection
Value 130 130 -20 to +20 40 500 -65 to 150 150 200
Unit V V.