High Power RF LDMOS FET
Innogration (Suzhou) Co., Ltd.
Document Number: ITDE15551D4 Preliminary Datasheet V1.0
1.3-1.5GHz, 550W, 40V High Powe...
Description
Innogration (Suzhou) Co., Ltd.
Document Number: ITDE15551D4 Preliminary Datasheet V1.0
1.3-1.5GHz, 550W, 40V High Power RF LDMOS FETs
Description
The ITDE15551D4 is a 550-watt, internally matched LDMOS FETs, designed for Multiple ISM applications within frequencies 1.3GHz to 1.5GHz.It can be used in Class AB/B and Class C for both CW and pulse applications in narrowband operation
ITDE15551D4 ITDE15551D4E
Typical Performance (On Innogration fixture with device soldered):
VDD = 40 Volts, IDQ = 100 mA, Tcase =25 degree C.
Frequency
Signal
Gp (dB) Pout(W)
D@Pout (%)
1500MHz
CW
12 500
53
1500MHz 100us,10%, Pulsed 12.5
600
57
Recommended driver: MU1504 operated at 40V
Features
High Efficiency and Linear Gain Operations Integrated ESD Protection Internally Matched for Ease of Use Optimized for Doherty Applications Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation Excellent thermal stability, low HCI drif...
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