High Power RF LDMOS FET
Innogration (Suzhou) Co., Ltd.
1GHz, 700W, 40V High Power RF LDMOS FETs
Description
The ITDE10700D4 is a 700-watt, inte...
Description
Innogration (Suzhou) Co., Ltd.
1GHz, 700W, 40V High Power RF LDMOS FETs
Description
The ITDE10700D4 is a 700-watt, internally matched LDMOS FETs, designed for Multiple ISM and RF Energy applications with frequencies up to 1GHz. It can be used in Class AB/B and Class C for both CW and pulse applications in narrowband operation
Typical Performance (On Innogration fixture with device soldered):
VDD = 40 Volts, IDQ = 100 mA, Tcase=25 degree C
Frequency
Signal
Gp (dB) P3dB(W)
D@P3dB (%)
915MHz
CW
15 700
68.4
915MHz 100us,10%, Pulsed 15.5
720
69
Recommended driver: MU1503V operated at 40V
Document Number: ITDE10700D4 Preliminary Datasheet V1.1
ITDE10700D4 ITDE10700D4E
Features
High Efficiency and Linear Gain Operations Integrated ESD Protection Internally Matched for Ease of Use Optimized for Doherty Applications Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation Excellent thermal stability, low HCI drift ...
Similar Datasheet