MQ1270VP LDMOS TRANSISTOR Document Number: MQ1270VP
Preliminary Datasheet V1.0
700W, 50V High Power RF LDMOS FETs
Desc...
MQ1270VP LDMOS
TRANSISTOR Document Number: MQ1270VP
Preliminary Datasheet V1.0
700W, 50V High Power RF LDMOS FETs
Description
The MQ1270VP is a 700-watt, high performance, internally matched LDMOS FET, designed for avionics applications with frequencies 960 to 1215MHz. It is featured for high power and high ruggedness. It is recommended to use this device under pulse condition only
Typical long pulse Performance (on innogration wide band test fixture with device
soldered): Pulse width:100uS, duty cycle: 10%, Vds = 50 V, Idq = 100 mA, TA = 25 C
Freq(MHz)
Pin(dBm)
Pout(dBm)
Pout(W)
IDS(A)
Gain(dB)
960 46.5
59
800 3.76 12.5
990 46.5
59.7
933 3.96 13.2
1010
46.5
60.2
1047
4.37
13.7
1040
46.5
58.9
776 3.81 12.4
1070
46.5
59.6
912 4.48 13.1
1100
46.5
58.8
750 4.37 12.3
1130
46.5
59.1
812 4.35 12.6
MQ1270VP
Eff(%) 43 48 48 41 41 35 38
1160
46.5
59.4
870 4.44 12.9 40
1190
46.5
59
800 4 12.5 41
1215
46.5
59.4
870 4.2 12.9 42
Typical s...