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MQ1090VP

Innogration

High Power RF LDMOS FET

MQ1090VP LDMOS TRANSISTOR 1000W, 50V High Power RF LDMOS FETs Description The MQ1090VP is a 1000-watt capable, high perf...


Innogration

MQ1090VP

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Description
MQ1090VP LDMOS TRANSISTOR 1000W, 50V High Power RF LDMOS FETs Description The MQ1090VP is a 1000-watt capable, high performance, internally matched LDMOS FET, designed for narrow band avionics applications with frequencies 1030/1090MHz. Document Number: MQ1090VP Preliminary Datasheet V1.0 MQ1090VP  Typical Avionics Performance (on innogration narrow band test fixture with device soldered): Frequency:1030MHz,: Vds = 50 Volts, Idq = 100 mA, TA = 25 C Pulse condition Gp (dB) POUT(W) D@POUT (%) pulse width 100us 14.5 1100 duty cycle 10% 56 pulse width 50us duty cycle 1% 14 1200 56.5 Features  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Internally Matched for Ease of Use  Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation  Excellent thermal stability, low HCI drift  Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Vol...




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