MNP0008

MNP0008 Silicon NIP Diode Features  Rugged Construction  Fully Passivated  Low Leakage  Available in Both Chip and Package Styles  Screening per MIL-PRF-19500 and MIL-PRF- 38534 Available Description The MNP0008 Series are silicon NIP diodes that features a fully passivated mesa construction for low leakage and reliability. Rev. V3 Electrical Specifications: TC = +25°C Parameter Test Conditions Voltage Breakdown Junction Capacitance DIE Package (C12p) Total Capacitance Package Style: ET47p T54p T55p T89p Series Resistance IR = 10 µA VR = 10 V, 1 MHz VR = 10 V, 1 MHz IF = 10 mA, 500 MHz Lifetime IF = 10 mA, IR = 6 mA, 50% I Layer — Units V pF Min. 100 — Typ. — 0.08 Max. — 0.12 pF — 0.48 0.60 0.28 0.37 0.21 0.29 0.33 0.43 Ω — 2.0 2.5 ns — 150 — µm — 10 — Absolute Maximum Ratings1,2 Parameter Reverse Voltage Thermal Resistance Operating & Storage Temperature Absolute Maximum 100 V +50°C/W -65°C to +150°C 1. Exceeding any ...