MSAT-P25

MSAT-P25 PIN Diode Attenuator Shunt Element Features  Low Distortion Harmonics @ 85 dBc  Broadband performance, >10 GHz  Low Insertion Loss & High Attenuation, 27 dB  RoHS* Compliant Description A broadband, High Linearity medium power shunt PIN Attenuator element 1.9 x 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is also suited for other applications in 0.1 ~ 10 GHz range. Rev. V1 2012 Electrical Specifications: TA = +25°C (measured on evaluation board) Parameter Test Conditions Units Min. Breakdown Voltage (VBR) Lifetime (LT) Minimum Series Resistance (RS) High Series Resistance (RS) Low Series Resistance (RS) IR = 10 µA IF = 10 m, IR = 6 Ma, 10% / 90% I = -100 mA, 500 MHz I = -10 µA, 500 MHz I = -50 mA, 500 MHz I = -50 mA, <10 GHz V 200 ns 2000 Ω— Ω 1200 Ω 20 28 Typ. — 3000 1.5 2200 30 35 Max. — 5000 2.5 3000 40 — Absolute Maximum Ratings Parameter Forward Curr...