PIN Diode Attenuator Shunt Element
MSAT-P25
PIN Diode Attenuator Shunt Element
(2012) Plastic Molded DFN
Description
A broadband, High Linearity medium p...
Description
MSAT-P25
PIN Diode Attenuator Shunt Element
(2012) Plastic Molded DFN
Description
A broadband, High Linearity medium power shunt PIN Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is also suited for other applications in 0.1 ~ 10 GHz range.
Features
Low Distortion Harmonics at 85 dBc Typical Broadband performance, beyond 10 GHz Low Insertion loss & high attenuation
range, 27 dB
Electrical Specifications, TC = +25 °C
SYMBOL
TEST CONDITIONS
VBR IR = 10 mA
t IF = 10 mA IR = 6 mA 10% / 90%
Rs min I = 100 mA
F = 500 MHz
Rs High I = 10 mA
F = 500 MHz
Rs Low I = 1 mA
F = 500 MHz
ATTEN I = 100 mA
F <10.0 GHz
MIN 200 2000
– 1200
20 20
TYPICAL –
3000 1.5 2200 30 30
MAX –
5000 2.5 3000 40 –
UNITS V ns
W W W
dB
Absolute Maximum Ratings
RATING
VR IF
θJC TJ TSTG TSOLDER
LIMITS 200 200 20 +175
-65 to +125 +260 oC per JEDEC J-STD-20C
UNITS V mA
oC/W oC...
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