MEST2G-010-20

MEST2G-010-20 Pin Diode Switch Element Features  Supports up to 10 W Power  Low Insertion Loss: 0.5 dB up to 2.7 GHz  High Isolation: 23 dB up to 2.7 GHz  RoHS* Compliant Description A broadband medium power switch element in a 1.9 x 1.1 mm DFN package. This device is electrical series and thermal direct to ground (EST2G). This device is designed for wireless infrastructure applications and test instruments. It is also suited for other applications from 100 MHz up to 10 GHz. Rev. V1 Electrical Specifications: TC = +25°C (unless otherwise specified) Parameter Test Conditions Units Min. Breakdown Voltage (VBR) Lifetime (t) I-Region (w) IR = 10 µA IF = 10 mA, IR = 6 mA, 10% / 90% I-Layer V 100 ns — µm — Series Resistance (RS) Junction Capacitance (CJ) Insertion Loss (IL) Input Return Loss (IRL) Isolation (ISO) IF = 100 mA VR = -10 V, 1 MHz IF = 50 mA, 2.3 ~ 2.7 GHz IF = 50 mA, <8 GHz IF = 50 mA, 2.3 ~ 2.7 GHz IF = 50 mA, <8 GHz VR = -10 mA, 2.3 ~ 2.7 GHz VR = ...