Silicon Standard Recovery Diode
Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 800 V to 1000 V VRRM • Not ESD Sensitive
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Description
Silicon Standard Recovery Diode
Features High Surge Capability Types from 800 V to 1000 V VRRM Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N3671A thru 1N3673AR
VRRM = 800 V - 1000 V IF = 12 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
VRRM VRMS VDC
IF
IF,SM
Tj Tstg
TC ≤ 150 °C TC = 25 °C, tp = 8.3 ms
1N3671A (R)
800 560 800 12
240
-55 to 150 -55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3671A (R)
Diode forward voltage
Reverse current
Thermal characteristics Thermal resistance, junction case
VF IF = 12 A, Tj = 25 °C
IR
VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 175 °C...
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