PDEJ2210Z

20V N-Channel MOSFETs PDEJ2210Z General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 2928-J Dual Pin Configuration D1 D1 D2 D2 D1 D2 G1 G2 G2 S2 S1 G1 S1 S2 BVDSS 20V RDSON 15m ID 7.6A Features  20V, 7.5A, RDS(ON)=15mΩ@VGS=4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.8V Gate Drive Applications  G-S ESD protection diode embedded Applications  Notebook  Load Switch  LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Curr...