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PDB3814S Dataheets PDF



Part Number PDB3814S
Manufacturers Potens semiconductor
Logo Potens semiconductor
Description Dual N-Channel MOSFETs
Datasheet PDB3814S DatasheetPDB3814S Datasheet (PDF)

Preliminary datasheet 30V Dual N-Channel MOSFETs PDB3814S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. DFN2X2 Dual 2EP Pin Configuration BVDSS 30V.

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