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PDB2116M Dataheets PDF



Part Number PDB2116M
Manufacturers Potens semiconductor
Logo Potens semiconductor
Description N+P Dual Channel MOSFETs
Datasheet PDB2116M DatasheetPDB2116M Datasheet (PDF)

20V N+P Dual Channel MOSFETs PDB2116M General Description These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, 20V -20V 40m 90m 3.8A -2.5A provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. DFN2X.

  PDB2116M   PDB2116M


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