30V N-Channel MOSFETs
PDB3810H
General Description
These N-Channel enhancement mode power field effect transistors are...
30V N-Channel MOSFETs
PDB3810H
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Q1 Q2
DFN3x3 Asymmetric Dual Pin Configuration
S2 S2 S2 G2
D1
G2 S2 S2 S2 G1D1 D1D1
S1/D2 D1
G1
D1 D1 D1 G1
G2 S1
BVDSS 30V 30V
RDSON 10.5m 10.5m
ID 19.5A 19.5A
Features
Improved dv/dt capability Fast switching 100% EAS Guaranteed D2 Halogen free
Applications
MB / VGA / Vcore POL Buck Applications SMPS 2nd SR
S2
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS PD TSTG
TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – C...