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PDC2603Z Dataheets PDF



Part Number PDC2603Z
Manufacturers Potens semiconductor
Logo Potens semiconductor
Description P-Channel MOSFETs
Datasheet PDC2603Z DatasheetPDC2603Z Datasheet (PDF)

20V P-Channel MOSFETs PDC2603Z General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Pin Configuration DDDD S S SG G D S BVDSS -20V RDSON 8m .

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20V P-Channel MOSFETs PDC2603Z General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Pin Configuration DDDD S S SG G D S BVDSS -20V RDSON 8m ID -60A Features  -20V,-60A, RDS(ON) =8mΩ@VGS = -4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for -1.8V Gate Drive Applications Applications  Notebook  Load Switch  Networking  Hand-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Curren.


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