Document
20V P-Channel MOSFETs
PDC2603Z
General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
PPAK3X3 Pin Configuration
DDDD S S SG
G
D S
BVDSS -20V
RDSON 8m
ID -60A
Features
-20V,-60A, RDS(ON) =8mΩ@VGS = -4.5V Improved dv/dt capability Fast switching Green Device Available Suit for -1.8V Gate Drive Applications
Applications
Notebook Load Switch Networking Hand-Held Instruments
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Curren.