PDC2209V

20V P-Channel Dual MOSFETs PDC2209V General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS -20V RDSON 33m ID -7.5A Features  -20V,-7.5A, RDS(ON) =33mΩ @VGS = -4.5V  Improved dv/dt capability  Fast switching  Green Device Available PPAK3x3 Dual Pin Configuration D1 D1D1D2D2 S1G1S2G2 G1 G2 S1 Applications D2  MB / VGA / Vcore  POL Applications  Networking S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power D...