PDC3808V

30V N-Channel MOSFETs PDC3808V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3x3 Dual Pin Configuration D1 D1 D1D2 D2 S1G1S2 G2 G1 G2 S1 D2 S2 BVDSS 30V RDSON 10.5mΩ ID 42A Features  30V,42A, RDS(ON) =10.5mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  MB / VGA / Vcore  POL Applications  SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) (Silicon Limited) Drain Current – Continuous (T...