100V N-Channel MOSFETs
PDC0978X
General Description
These N-Channel enhancement mode power field effect transistors ar...
100V N-Channel MOSFETs
PDC0978X
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
PPAK5X6 Pin Configuration
DDD D S S SG
G
D S
BVDSS 100V
RDSON 7.2m
ID 65A
Features
100V,65A, RDS(ON) =7.2mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
Networking Load Switch LED applications Quick Charger
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) (Chip Limitation) Drain Current – Continuous (TC=100℃) (Ch...