AT49LV010

AT49(H)BV/(H)LV01 Features Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte By Byte Programming - 30 µs/Byte typical Hardware Data Protection DATA Polling For End Of Program Detection Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current Typical 10,000 Write Cycles Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial temperature range. When the devices are deselected, the CMOS standby current is less than 50 µA. To allow for simple in-system reprogrammability, the AT49(H)BV/(H)LV010 does not require high input voltages for programming. Three-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT49(H)BV/(H)LV010 is performed by erasing the entire 1 megabit of memory and then programming on a byte by byte basis. The typical byte programming time is a fast 30 µs. The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte program cycle has been detected, a new access for a read or ...