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40V Dual N-Channel MOSFETs
PDC4806T
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
PPAK5x6 Dual Pin Configuration
D2 D2 D1 D1
D1
G2 S2 S1G1
G1
G2 S1
D2 S2
BVDSS 40V
RDSON 9m
ID 30A
Features 30V,30A, RDS(ON) =9mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
MB / VGA / Vcore POL Applications SMPS 2nd SR USB Type C
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (.