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PDC4806T Dataheets PDF



Part Number PDC4806T
Manufacturers Potens semiconductor
Logo Potens semiconductor
Description Dual N-Channel MOSFETs
Datasheet PDC4806T DatasheetPDC4806T Datasheet (PDF)

40V Dual N-Channel MOSFETs PDC4806T General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5x6 Dual Pin Configuration D2 D2 D1 D1 D1 G2 S2 S1G1 G1 G.

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40V Dual N-Channel MOSFETs PDC4806T General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5x6 Dual Pin Configuration D2 D2 D1 D1 D1 G2 S2 S1G1 G1 G2 S1 D2 S2 BVDSS 40V RDSON 9m ID 30A Features  30V,30A, RDS(ON) =9mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  MB / VGA / Vcore  POL Applications  SMPS 2nd SR  USB Type C Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (.


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