PDC0854T

100V Dual N-Channel MOSFETs PDC0854T General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5x6 Dual Pin Configuration D2 D2 D1 D1 D1 G2 S2 G1 S1 G1 G2 S1 D2 S2 BVDSS 100V RDSON 330m ID 6.6A Features  100V,6.6A, RDS(ON) =330mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Networking  Load Switch  LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Cur...