Transistors. 2N2907A Datasheet

2N2907A Transistors. Datasheet pdf. Equivalent

Part 2N2907A
Description Transistors
Feature PN2907A / 2N2907A PN2907A / 2N2907A PNP General purpose Si-Epitaxial PlanarTransistors Si-Epitaxi.
Manufacture Diotec
Datasheet
Download 2N2907A Datasheet



2N2907A
PN2907A / 2N2907A
PN2907A / 2N2907A
PNP
General purpose Si-Epitaxial PlanarTransistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Version 2005-11-21
Power dissipation
Verlustleistung
Plastic case
E B C Kunststoffgehäuse
Weight approx. – Gewicht ca.
2 x 2.54
Dimensions / Maße [mm]
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
PNP
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. - Kollektor-Emitter-Spannung
Collector-Emitter-volt. - Kollektor-Emitter-Spannung
Emitter-Base-voltage - Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
E open
B open
C open
- VCB0
- VCE0
- VEB0
Ptot
- IC
Tj
TS
Grenzwerte (TA = 25°C)
PN2907A / 2N2907A
60 V
60 V
5V
625 mW 1)
600 mA
-65...+150°C
-65…+150°C
Characteristics (Tj = 25°C)
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 50 V
Collector saturation voltage – Kollektor-Sättigungsspannung
- IC = 150 mA, - IB = 15 mA 2)
- IC = 500 mA, - IB = 50 mA 2)
Base saturation-voltage – Basis-Sättigungsspannung
- IC = 150 mA, - IB = 15 mA 2)
- IC = 500 mA, - IB = 50 mA 2)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
- ICB0
– 10 nA
- VCEsat
- VCEsat
– 0.3 V
– 1V
- VBEsat
0.6 V
1.2 V
- VBEsat
– 2V
1 Valid if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1



2N2907A
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
- IC = 0.1 mA, - VCE = 10 V
- IC = 1 mA, - VCE = 10 V
- IC = 10 mA, - VCE = 10 V
- IC = 150 mA, - VCE = 10 V 1)
- IC = 500 mA, - VCE = 10 V 1)
Gain-Bandwidth Product – Transitfrequenz
- IC = 20 mA, - VCE = 20 V, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
Emitter-Base Capaciance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC =ic = 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
PN2907A / 2N2907A
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
hFE 35
hFE 50
hFE 75
hFE 100
hFE 40
fT 250 MHz
300
CCB0
– 8 pF
CEB0
– 30 pF
RthA < 200 K/W 1)
PN2222A / 2N2222A
120
[%]
100
80
60
40
20
IFAV
0
0 TT 50 100 150 [°C]
Rated forward current vs. temp. of the terminals
Zul. Richtstrom in Abh. v. d. Temp. der Terminals
1 Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%
1 Valid if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
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© Diotec Semiconductor AG





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