AT49LV2048A

Features Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture – One 8K Word (16K Bytes) Boot Block with Programming Lockout – Two 4K Word (8K Bytes) Parameter Blocks – One 112K Word (224K Bytes) Main Memory Array Block Fast Sector Erase Time – 10 Seconds Byte-by-byte or Word-by-word Programming – 30 µs Typical Hardware Data Protection Data Polling for End of Program Detection Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current Typical 10,000 Write Cycles Description The AT49BV/LV2048A is a 3-volt, 2-megabit Flash memory organized as 262,144 words of 8 bits each or 128K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than 50 µA. Th e device co nt ain s a us e r-e n a ble d “ bo o t blo ck ” pr ot ec tio n fe a tu re. Th e AT49BV/LV2048A locates the boot block at lowest order addresses (“bottom boot”). To allow for simple in-system reprogrammability, the AT49BV/LV2048A does not require high input voltages for programming. Reading data out of the device is similar to reading from an EPROM; it has standard CE, OE and WE inputs to avoid bus contention. Reprogramming the AT49BV/LV2048A is performed by first erasing a block of data and then programming on a byte-...