2SK3217-01MR
N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching Low on-resistance No sec...
2SK3217-01MR
N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
TO-220F15
Applications Switching
regulators UPS (Uninterruptible Power Supply) DC-DC converters
2.54
3. Source
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Ta=25°C Tc=25°C Operating and storage temperature range
Symbol VDS ID ID(puls] VGS EAV *1 PD PD Tch Tstg
Rating 100 ±50
±200 ±30 464 2.0 70
+150 -55 to +150
Unit V A A V mJ W W °C °C
*1 L=298µH, Vcc=24V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current Drain-source ...
