AT59C11W-10SC-2.5

Features Low Voltage and Standard Voltage Operation – 5.0 (VCC = 4.5V to 5.5V) – 2.7 (VCC = 2.7V to 5.5V) – 2.5 (VCC = 2.5V to 5.5V) User Selectable Internal Organization – 1K: 128 x 8 or 64 x 16 – 2K: 256 x 8 or 128 x 16 – 4K: 512 x 8 or 256 x 16 4-Wire Serial Interface Self-Timed Write Cycle (10 ms max) High Reliability – Endurance: 1 Million Write Cycles – Data Retention: 100 Years – ESD Protection: >4000V 8-Pin PDIP and 8-Pin EIAJ SOIC Packages 4-Wire Serial EEPROMs 1K (128 x 8 or 64 x 16) 2K (256 x 8 or 128 x 16) 4K (512 x 8 or 256 x 16) Description The AT59C11/22/13 provides 1024/2048/4096 bits of serial EEPROM (Electrically Erasable Programmable Read Only Memory) organized as 64/128/256 words of 16 bits each, when the ORG Pin is connected to VCC and 128/256/512 words of 8 bits each when it is tied to ground. The device is optimized for use in many industrial and commercial applications where low power and low voltage operation are essential. The AT59C11/22/13 is available in space saving 8-pin PDIP and 8-pin EIAJ SOIC packages. The AT59C11/22/13 is enabled through the Chip Select pin (CS), and accessed via a 4-wire serial interface consisting of Data Input (DI), Data Output (DO), and Clock (CLK). Upon receiving a READ instruction at DI, the address is decoded and the data is clocked out serially on the data output pin DO, the WRITE cycle is completely selftimed and no separate ERASE cycle is required before WRITE. The WRITE cycle is only enabled when t...