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MBC50-x Series
MNOS Series Capacitor Beam Leads
Features
Low Leakage Current Low Insertion Loss Excellent Long Term Stability
Description
The MBC50-x Series capacitors utilize a silicon nitride dielectric over a thermally grown silicon dioxide base. The resultant composite dielectric exhibits low leakage current and insertion loss with excellent long-term stability. The temperature coefficient of capacitance is typically +55 ppm / ºC.
Rev. V1
Electrical Specifications: TA = +25°C
Part #
MBC50-1B12 MBC50-2B12 MBC50-3B12 MBC50-4B12 MBC50-6B12 MBC50-8B12 MBC50-10B12 MBC50-15B12 MBC50-20B12 MBC50-33B13 MBC50-47B13 MBC50-68B13 MBC50-82B13 MBC50-100B13 MBC50-0.2B14 MBC50-1.0B14 MBC50-1.5B14 MBC50-2.0B14
Total Capacitance
(CT) pF ±20% Typ. 1 2 3 4 6 8 10 15 20 33 47 68 82 100 0.2 1.0 1.5 2.0
Voltage (DWV)
V Min. 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50
Reverse Current
(IR) mΩ Min. 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 100.