IDT7M824S

FEATURES: High-density 1024K-bit (128K x 8-bit) CMOS static RAM modules with registered/buffered/latched addresses and I/Os Fast access times: 75ns max. commercial and military Low-power consumption (typ.): active 980mW; standby 150mW; full-standby 1.6mW Low input capacitance (typ.): input 20pF; output 25pF High output drive (min.): IOL =32mA; IOH =-15mA 64-pin, 900 mil center sidebraze DIP with LCCs on both sides, achieving very high memory density Module select output Separate inputs and outputs Clear data and clock enables on all registers Addresses, inputs and outputs on separate clocks or latch enables Registered write enable Internal bypass capacitors for minimizing power supply noise TTL compatible; single 5V (±10%) power supply Five GND pins for maximum noise immunity, 5 Vee pins Military grade module available with semiconductor components 100% manufactured and screened to MIL-STD-883, Class B PIN CONFIGURATION GNO...