Part Number

1S20

Description

Schottky Barrier Rectifier

Manufacture

Yangzhou Yangjie

Total Page 4 Pages
PDF Download
Download 1S20 Datasheet PDF


Features Datasheet pdf 1S20 THRU 1S200  RoHS COMPLIANT   S chottky Barrier Rectifier Features ● Guardring for overvoltage protection Very small conduction losses ● Ext remely fast switching ● High forward surge capability ● High frequency ope ration ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Applications For use in low voltage high frequency inverters, freewheeling, DC/DC converte rs, and polarity protection application s. Mechanical Data ● Package: R-1 Mo lding compound meets UL 94 V-0 flammabi lity rating, RoHS-compliant, Halogen fr ee ● Terminals: Tin plated leads, sol derable per J-STD- 002 and JESD22-B102 ● Polarity: Color band denotes the ca thode end ■Maximum Ratings (Ta=25℃ Unless otherwise spe.
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1S20 Datasheet
1S20 THRU 1S200 
RoHS
COMPLIANT
 
Schottky Barrier Rectifier
Features
Guardring for overvoltage protection
Very small conduction losses
Extremely fast switching
High forward surge capability
High frequency operation
Solder dip 275 °C max. 7 s, per JESD 22-B106
Typical Applications
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
Mechanical Data
Package: R-1
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, Halogen free
Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
Polarity: Color band denotes the cathode end
Maximum Ratings (Ta=25Unless otherwise specified
PARAMETER
SYMBOL UNIT 1S20 1S30
1S40
1S50
1S60
1S80 1S100 1S150 1S200
Device marking code
1S20 1S30 1S40 1S50 1S60 1S80 1S100 1S150 1S200
Repetitive Peak Reverse Voltage
Average Rectified Output Current
@60Hz sine wave, Resistance load, Ta (FIG.1)
Surge(Non-repetitive)Forward Current
@60Hz Half-sine wave,1 cycle, Ta=25
Storage Temperature
VRRM
V
20 30 40 50 60 80 100 150 200
IO
IFSM
Tstg
A
A
1.0
30
-55 ~+150
Junction Temperature
Tj
-55 ~+125
-55 ~+150
Electrical CharacteristicsTa=25Unless otherwise specified
PARAMETER
SYMBOL UNIT TEST CONDITIONS 1S20 1S30 1S40
Maximum instantaneous forward
voltage drop per diode
Maximum DC reverse current at
rated DC blocking voltage per
diode
Typical junction capacitance
VF
IR
Cj
V IFM=1.0A
mA
Ta=25
Ta=100
Measured at 1MHZ
pF and Applied Reverse
Voltage of 4.0 V.D.C.
0.55
0.2
20
1S50 1S60
0.7
110
1S80 1S100 1S150 1S200
0.85
0.1
5
S-A249
Rev. 2.0, 31-Oct-14
1/4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com




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