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PDS3808 Dataheets PDF



Part Number PDS3808
Manufacturers Potens semiconductor
Logo Potens semiconductor
Description N-Channel MOSFETs
Datasheet PDS3808 DatasheetPDS3808 Datasheet (PDF)

30V N-Channel MOSFETs PDS3808 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS 30V RDSON 11m ID 9A Features  30V,9A, RDS(ON) =11mΩ@VGS = 10V.

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