30V Dual N-Channel MOSFETs
PDS3812
General Description These N-Channel enhancement mode power field effect transistors...
30V Dual N-Channel MOSFETs
PDS3812
General Description These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Dual SOP8 Pin Configuration D1
D2 D2 D1 D1
G1 G2
G2 S2 S1G1
G
S1
D2 S2
BVDSS 30V
RDSON 20m
ID 7.5A
Features 30V,7.5A, RDS(ON) =20mΩ @VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
MB / VGA / Vcore POL Applications SMPS 2nd SR
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Dr...