40V Dual N-Channel MOSFETs
PDS4806
General Description These N-Channel enhancement mode power field effect transistors...
40V Dual N-Channel MOSFETs
PDS4806
General Description These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
SOP8 Dual Pin Configuration
D2 D1 D2 D1
D1 G1
S1G1S2 G2
S1
G2
D2 S2
BVDSS 40V
RDSON 13m
ID 12A
Features 40V,12A,RDS(ON) =13mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
Motor Drive Power Tools LED Lighting
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – ...