PDS3712

30V N+P Dual Channel MOSFETs PDS3712 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D2 D2 D1 D1 G2 G1 S2 G1 S1 D1 G2 S1 D2 2 S2 BVDSS 30V -30V RDSON 20m 50m ID 8A -5.5A Features  Fast switching  Green Device Available  Suit for 4.5V Gate Drive Applications Applications  DC Fan  Motor Drive Applications  Networking  Half / Full Bridge Topology Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID ID M EAS IAS PD T STG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Dra...