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100V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
SOT223 Pin Configuration
D
D
S D G
G
S
PDL0910
BVDSS 100V
RDSON 185m
ID 3A
Features 100V,3A, RDS(ON) =185mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed
ApplicGaretieonnDsevice Available
Networking Load Switch LED applications
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissipation (TC=25℃) Po.