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PDL0910 Dataheets PDF



Part Number PDL0910
Manufacturers Potens semiconductor
Logo Potens semiconductor
Description N-Channel MOSFETs
Datasheet PDL0910 DatasheetPDL0910 Datasheet (PDF)

100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT223 Pin Configuration D D S D G G S PDL0910 BVDSS 100V RDSON 185m ID.

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100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT223 Pin Configuration D D S D G G S PDL0910 BVDSS 100V RDSON 185m ID 3A Features  100V,3A, RDS(ON) =185mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed ApplicGaretieonnDsevice Available  Networking  Load Switch  LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissipation (TC=25℃) Po.


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