Document
Preliminary datasheet
500V N-Channel MOSFETs
PDL01N50
General Description
These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply
BVDSS 500V
RDSON 16
Features
Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
ID 1A
SOT223 Pin Configuration
D
S D G
G
Applications D High efficient switched mode power supplies
TV Power Adapter/charger LED Lighting
S
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pu.