30V P-Channel MOSFETs
PDL3911
General Description These P-Channel enhancement mode power field effect transistors are ...
30V P-Channel MOSFETs
PDL3911
General Description These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
SOT223 Pin Configuration
D G
D
BVDSS -30V
RDSON 55m
ID -4.5A
Features -30V,-4.5A, RDS(ON) =55mΩ@VGS = -10V Fast switching Green Device Available Suit for -4.5V Gate Drive Applications
Applications
Notebook Load Switch Battery Protection Hand-held Instruments
S D G
S
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissi...