PDN2316S

20V N-Channel MOSFETs PDN2316S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS 20V RDSON 40m ID 5A Features  20V, 5A, RDS(ON) =40mΩ@VGS = 4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.8V Gate Drive Applications Applications  Notebook  Load Switch  Hend-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Diss...