PDN3914S

30V N-Channel MOSFETs PDN3914S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D S G G D S BVDSS 30V RDSON 25m ID 5.5A Features  30V,5.5A, RDS(ON) =25mΩ @VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  MB / VGA / Vcore  Load Switch  Hand-Held Instrument Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Puls...