PDN0910S

100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D G PDN0910S BVDSS 100V RDSON 200m ID 2A Features  100V,2A, RDS(ON) =200mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed ApplicGaretieonnDsevice Available  Networking  Load Switch  LED applications S Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissipation (TC=25℃) Power Dis...