PDN3643

30V P-Channel MOSFETs PDN3643 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3 Pin Configuration D S G G D S BVDSS -30V RDSON 32m ID -4.8A Features  -30V,-4.8A, RDS(ON) =32mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -2.5V Gate Drive Applications  RoHS compliant & Halogen Free Applications  Notebook  Load Switch  Battery Protection  Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=70℃) Drain...