Document
20V P-Channel MOSFETs
PDN2309S
General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
D
D
S G
G S
BVDSS -20V
RDSON 33m
ID -5.8A
Features -20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V Improved dv/dt capability Fast switching Green Device Available Suit for -1.8V Gate Drive Applications
Applications
Notebook Load Switch Battery Protection Hand-held Instruments
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drai.