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PDN2309S Dataheets PDF



Part Number PDN2309S
Manufacturers Potens semiconductor
Logo Potens semiconductor
Description P-Channel MOSFETs
Datasheet PDN2309S DatasheetPDN2309S Datasheet (PDF)

20V P-Channel MOSFETs PDN2309S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS -20V RDSON 33m ID -.

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20V P-Channel MOSFETs PDN2309S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS -20V RDSON 33m ID -5.8A Features  -20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for -1.8V Gate Drive Applications Applications  Notebook  Load Switch  Battery Protection  Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drai.


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